型号描述
| 型号 | 生产品牌/企业名称 | 功能参数描述 | LOGO | 操作 |
|---|---|---|---|---|
| GT50J328 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Bipolar Small-Signal Transistors |  |
|
| GT50J327 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application | |
|
| GT50J325 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Silicon N Channel IGBT High Power Switching Applications | |
|
| GT50J322 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
N CHANNEL MOS TYPE (THE 4TH CENERATION CURRENT RESONACE INVERTER SWITHCING APPLICATIONS) | |
|
| GT50J301 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
N CHANNEL IGBT (HIGH POWER SWITCHING MOTOR CONTROL APPLICATIONS) | |
|
| GT50J341 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Discrete IGBTs Silicon N-Channel IGBT | |
|
| GT50J322H | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Bipolar Small-Signal Transistors | |
|
| GT50J325_06 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
Silicon N Channel IGBT High Power Switching Applications | |
|
| GT50J322_06 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |
SILICON N CHANNEL IGBT FOURTH GENERATION IGBT | |
型号货源
